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Country: China

1280 InGaAs High-Definition (HD) Area Sensor

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GH-SW1280 ingaas sensor are two-dimensional image sensors that have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes for short wavelength infrared (SWIR, 900-1700) and extended wavelength infrared (Vis-SWIR, 400-1700) regions.

The package includes a Thermo Electric Cooler (TEC) that can utilized for cooling the FPA for high signal-to-noise ratio (SNR).

It is well-adapted to a large range of applications, such as long range surveillance at severe weather conditions (fog, haze, rain, smoke, dust), hyperspectral imaging, remote sensing and science.

TECHNICAL INFORMATION OF GH-SW1280

Key Features

GH-SW1280

Sensor Type

InGaAs PIN-Photodiode

Format

1280 x 1024

Pixel Pitch

15 μm

Spectral Response

0.9-1.7μm

Integration Type

Snapshot

Readout Modes

ITR, IWR, CDS

Exposure Time

1μs to full frame

Maximum Full Frame Rate

100 Hz

Maximum Pixel Rate

22MHz

Output Signal Swing

≤2V

Temperature Sensor Output

Yes

Quantum Efficiency(QE)

>70% (1.0um ~ 1.6um

Noise with ROIC

40e- @HG

Dark Current

30fA@0.1V&18℃

Array Operability

> 99.5% ( Minimum )

Non Uniformity without Correction

<5%

Dimension (W x H x D)

40mm × 36mm × 7.2mm

Windows

Quartz/ Sapphire

Number of Pins

30-pin Metal DIP Package

Packaging Characteristics

Hermetically sealed

Operating Temperature

- 40℃ to 70℃

Storage Temperature

- 40℃ to 70℃


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